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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU931 DESCRIPTION *With TO-3 package *High voltage *DARLINGTON APPLICATIONS *High ruggedness electronic ignitions. *High voltage ignition coil driver PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings (Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current (peak) Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 500 400 5 15 30 1 5 175 -65~200 -65~200 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Diode forward voltage CONDITIONS IC=0.1A; IB=0;L=10mH IC=7A;IB=70mA IC=8 A;IB=100mA IC=10 A;IB=250mA IC=7A;IB=70mA IC=8 A;IB=100mA IC=10A;IB=250mA VCE=500V;VBE=0 Tj=125 VCE=450V;IB=0 Tj=125 VEB=5V; IC=0 IC=5A ; VCE=10V IF=10A 300 MIN 400 TYP. BU931 SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VCEsat-3 VBEsat-1 VBEsat-2 VBEsat-3 ICES ICEO IEBO hFE VF MAX UNIT V 1.6 1.8 1.8 2.2 2.4 2.5 0.1 0.5 0.1 0.5 20 V V V V V V mA mA mA 2.5 V 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU931 Fig.2 Outline dimensions 3 |
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